AMOLF Institutional Repository
Selected Open Access and other scholarly publications from AMOLF and related researchers.
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Effect of the Fermi level position in silicon on ion-induced displacement of impurities In Proceedings
January 1979 -
January 1979
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Time-dependent theory of electronic-to-vibrational energy transfer. Application to metastable argon atoms with nitrogen moecules Article
Chem. Phys. Lett., 252-257.January 1979 -
Nonthermal pulsed laser annealing of Si; plasma annealing Article
Phys. Lett. A, 422-426.January 1979 -
Reasons to believe pulsed laser annealing if Si does not involve simple thermal melting Article
Phys. Lett. A, 417-421.January 1979 -
The polarisation of electrons elastically scattered from xenon at energies between 5 and 300 eV Article
J. Phys. B, 3935-3946.January 1979 -
Rayleigh scattering from n=2 states of atomic hydrogen Article
Z. Phys. A, 269-279.January 1979 -
Beam-energy dependence of displacement effects in Si Article
Radiat. Eff., 153-158.January 1979