AMOLF Institutional Repository
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Excitation of Li by He2+ ion impact between 15 and 600 KeV Article
J. Phys. B, 3297-3304.K. Kadota, D. Dijkkamp, R.L. van der Woude, P.G. Yan and F.J. de Heer
January 1982 -
Ion beam crystallography of metal-silicon interfaces: Pd-Si(111) Article
Thin Solid Films, 151-159.R.M. Tromp, E.J. van Loenen, M. Iwami, R.G. Smeenk and F.W. Saris
January 1982 -
Surface electronic structure of GaAs(001)-(2x4): angle-resolved photoemission and tight-binding calculations Article
Phys. Rev. B, 3222-3237.P.K. Larsen, J.F. van der Veen, A. Mazur, J. Pollmann, J.H. Neave and B.A. Joyce
January 1982 -
A new electrostatic analyser for wide beams and its ion-optical properties Article
Int. J. Mass Spectrom. Ion Phys., 117-127.January 1982 -
State-to-state total cross sections for ion-pair formation Article
Chem. Phys., 443-446.U.C. Klomp and J.H. Los
January 1982 -
Dopant redistribution by pulsed-laser annealing of ion-implanted silicon Article
Radiat. Eff., 43-59.January 1982 -
On the structure of the laser irradiated Si(111)-(1x1) surface Article
Solid State Commun., 971-974.January 1982 -
Vibronic coupling at intersections of covalent and ionic states Article
Phys. Rep., 3-71.January 1982