AMOLF Institutional Repository
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Epitaxial growth of Si on GaP(100) and Si(111), monitored by soft X-ray reflection Article
Surf. Sci., 601-613.M.P. Bruijn, H.G. Muller, J. Verhoeven (Jan) and M.J. van der Wiel
January 1985 -
Total cross sections for electron scattering from Ar, Kr and Xe Article
J. Phys. B, 2021-2036.January 1985 -
Hoe herkent men een goed instituut? Book Chapter
January 1985 -
Ion-assisted etching of silicon by SF6 Article
Appl. Phys. Lett., 1166-1168.D.J. Oostra, R.A. Haring, A.E. de Vries, F.H.M. Sanders and K. Miyake
January 1985 -
Ti-Si mixing at room temperature: a high resolution ion backscattering study Article
Surf. Sci., 65-78.January 1985 -
Ion channeling and blocking study of ultra-thin NiSi2 films grown on atomically clean Si(111) surfaces In Proceedings
January 1985 -
Surface characterization of arsenic implanted silicon (100): a new insight into the inhibition of aluminium/silicon interdiffusion In Proceedings
N. Herbots, D. Gloesener, E.J. van Loenen and A.E.M.J. Fischer
January 1985 -
Pre-annealing of TiN barriers in A1 metallization of silicon In Proceedings
January 1985