AMOLF Institutional Repository
-
Molecuulbundel-epitaxie van silicium op GaP en GaAs Article
Philips Tech. Tijdschr., 166-178.January 1986 -
Characterization of ultrathin nickel layers on Si(111) using RHEED and RBS Article
Appl. Surf. Sci., 143-150.January 1986 -
Low-ß ion acceleration with a MEQALAC In Proceedings
P.W. van Amersfoort, F. Siebenlist, R.W. Thomae, R.-G.C. Wojke, F.G. Schonewille, S.T. Ivanov, J. Kistemaker, H. Klein, A. Schempp and T. Weis
January 1986 -
Energy and dose dependence of ion beam mixing of Cu and W Article
Nucl. Instrum. Methods Phys. Res. B, 54-58.January 1986 -
Elastic scattering from a Yukawa potential in intense, high-frequency laser fields Article
Phys. Lett. A, 331-335.January 1986 -
Laser-induced etching of Si with chlorine Article
J. Appl. Phys., 2321-2326.January 1986 -
A new method for the evaluation of solar cell parameters Article
Sol. Cells, 241-251.A. Polman (Albert), W.G.J.H.M. van Sark, W.C. Sinke (Wim) and F.W. Saris
January 1986 -
Ni-C multilayer reflectivity and photoelectron yield in the NiÐ -edge region Article
Appl. Phys. Lett., 914-916.H. van Brug, M.P. Bruijn, R. van der Pol and M.J. van der Wiel
January 1986