AMOLF Institutional Repository
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Reduction of secondary defect formation in MeV B+ ion-implanted Si (100) Article
Appl. Phys. Lett., 1838-1840.W.X. Lu, Y.H. Qian, R.H. Tian, Z.L. Wang, R. Schreutelkamp, J.R. Liefting and F.W. Saris
January 1989 -
Dependence of the NO/Ag(111) trapping probability on molecular orientation Article
Chem. Phys., 451-460.January 1989 -
Fysica: Norman Ramsey, Hans G. Dehmelt en Wolfgang Paul Article
Intermediair, 39-41.January 1989 -
Chemical bonding at metal-semiconductor interfaces Article
Appl. Surf. Sci., 236-240.January 1989 -
X-ray scattering studies of semiconductor interfaces: atomic structure and morphology Article
Appl. Surf. Sci., 62-69.January 1989 -
Dissociation and vibrational excitation of H2 molecules and wall influence on the densities in a multicusp ion source Article
Phys. Rev. A, 3613-3625.P.J. Eenshuistra, R.M.A. Heeren (Ron), A.W. Kleyn and H.J. Hopman
January 1989 -
Dissociation dynamics of the d1Pg and C3Pg v=0-2 vibrational states in O2 Article
J. Chem. Phys., 4597-4602.January 1989 -
Anomalies in above-threshold ionization observed in H2 and its ecxited fragments Article
Phys. Rev. A, 4383-4391.J.W.J. Verschuur, L.D. Noordam and H.B. van Linden van den Heuvell
January 1989