AMOLF Institutional Repository
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Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces Article
Phys. Rev. B, 9598-9608.J. Vrijmoeth, J.F. van der Veen, D.R. Heslinga and T.M. Klapwijk
January 1990 -
Use of the effective heat of formation rule for predicting phase formation sequence in Al-Ni systems Article
Mater. Lett., 494-499.January 1990
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Structure of the hard ellipsoid fluid Article
J. Chem. Phys., 3048-3057.J. Talbot, D. Kivelson, M.P. Allen, G.T. Evans and D. Frenkel
January 1990 -
Influence of pre-Gaussian noise on selective ionization Article
Phys. Rev. A, 1466-1471.January 1990 -
Measurement of ion energy distributions at the powered rf electrode in a variable magnetic field Article
J. Appl. Phys., 1229-1240.January 1990 -
Damage distribution and annealing behaviour of high energy 115In+ implanted into Si(100) Article
Nucl. Instrum. Methods Phys. Res. B, 425-430.B.-X. Zhang, Z.L. Wang, R. Schreutelkamp, F.W. Saris, A.-Y. Du and Q. Li
January 1990 -
Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni-Zr Article
J. Mater. Res., 341-346.January 1990
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Simultaneous bunching of different ion species in a periodic focusing transport channel Article
Nucl. Instrum. Methods Phys. Res. A, 329-338.R.-G.C. Wojke, W.H. Urbanus, J.G. Bannenberg, H. Klein, A. Schempp, R.W. Thomae, T. Weis and P.W. van Amersfoort
January 1990