AMOLF Institutional Repository
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Structural and electrical characterization of Si(100) implanted with P+ and Si+ ions along the [100] channelling direction Article
Mater. Sci. Eng. B, 149-165.R. Schreutelkamp, R. de Reus, F.W. Saris, R.E. Kaim, J.F.M. Westendorp, K.T.F. Janssen and J.J.M. Ottenheim
January 1990
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Buffer layers for superconducting Y-Ba-Cu-O thin films on silicon and SiO2 Article
Mater. Sci. Eng. B, 135-147.R. de Reus, F.W. Saris, G.J. van der Kolk, C. Witmer, B. Dam (Bernard), D.H.A. Blank, D.J. Adelerhof and J. Flokstra
January 1990
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Defect states of amorphous Si probed by the diffusion and solubility of Cu Article
Appl. Phys. Lett., 1230-1232.A. Polman (Albert), D.C. Jacobson, S. Coffa, J.M. Poate, S. Roorda and W.C. Sinke (Wim)
January 1990 -
Oxidation-induced segregation at the Pt0.5Ni0.5(111) surface studied by medium-energy ion scattering Article
Appl. Surf. Sci., 121-129.S. Deckers, F.H.P.M. Habraken, W.F. van der Weg, A.W. Denier van der Gon, J.F. van der Veen and J.W. Geus
January 1990 -
Direct measurement of correlation functions in a lattice Lorentz gas Article
Phys. Rev. A, 2463-2466.January 1990 -
Segregation at the Pt0.5Ni0.5(111) surface studied by medium-energy ion scattering Article
Phys. Rev. B, 3253-3259.S. Deckers, F.H.P.M. Habraken, W.F. van der Weg, A.W. Denier van der Gon, B. Pluis, J.F. van der Veen and R. Baudoing
January 1990 -
January 1990
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Behavior type method: symmetry and structure of point defects in cubic crystals derived from polarized Raman scattering Article
J. Phys. Chem. Solids, 821-834.January 1990