AMOLF Institutional Repository
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Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni-Zr Article
J. Mater. Res., 341-346.January 1990
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Range straggling of MeV ions in amorphous silicon: discrepancies with trim Article
Nucl. Instrum. Methods Phys. Res. B, 448-452.R. Schreutelkamp, J.R. Liefting, P.M. Zagwijn, W.X. Lu and F.W. Saris
January 1990 -
Damage distribution and annealing behaviour of high energy 115In+ implanted into Si(100) Article
Nucl. Instrum. Methods Phys. Res. B, 425-430.B.-X. Zhang, Z.L. Wang, R. Schreutelkamp, F.W. Saris, A.-Y. Du and Q. Li
January 1990 -
Measurement of ion energy distributions at the powered rf electrode in a variable magnetic field Article
J. Appl. Phys., 1229-1240.January 1990 -
Influence of pre-Gaussian noise on selective ionization Article
Phys. Rev. A, 1466-1471.January 1990 -
Structure of the hard ellipsoid fluid Article
J. Chem. Phys., 3048-3057.J. Talbot, D. Kivelson, M.P. Allen, G.T. Evans and D. Frenkel
January 1990 -
O2- formation at Si(001) Article
Surf. Sci., 35-42.J.H. Rechtien, U. Imke, K.J. Snowdon, P.H.F. Reijnen, P.J. van den Hoek and A.W. Kleyn
January 1990 -
Form perturbations of the Laplacian on L2 (R) by a class of measures Article
J. Math. Phys., 308-315.January 1990