AMOLF Institutional Repository
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Picosecond photocarrier lifetimes in ion-irradiated amorphous and crystalline silicon Book Chapter
P.A. Stolk, L. Calcagnile, S. Roorda, H.B. van Linden van den Heuvell and F.W. Saris
January 1992 -
Strain relaxation during the surfactant modified epitaxial growth of Ge/Si(001) Article
Surf. Sci., 1-8.J.M.C. Thornton, A.A. Williams, J.E. MacDonald, R. van Silfhout, M.S. Finney and C. Norris
January 1992 -
Elastic constants of hard and soft nematic liquid crystals Article
J. Phys. Chem., 3942-3948.January 1992 -
Absolute visible light emission cross sections for electron capture from Li atoms by slow, highly charged ions Article
J. Phys. B, 2597-2606.E. Wolfrum, R. Hoekstra (Ronnie), F.J. de Heer, R. Morgenstern and H. Winter
January 1992 -
January 1992
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A copper vapour laser operating at wavelengths of 303.6 nm and 306.3 nm Article
Z. Phys. D, 155-158.January 1992 -
Growth-site-limited crystallization of amorphous silicon Article
Phys. Rev. Lett., 780-783.J.S. Custer, A. Battaglia, M. Saggio and F. Priolo (Francesco)
January 1992 -
The role of extended defects on transient boron diffusion in ion-implanted silicon Article
Mater. Sci. Eng. B, 307-325.R. Schreutelkamp, J.S. Custer, V. Raineri, W.X. Lu, J.R. Liefting, F.W. Saris, K.T.F. Janssen, P.F.H.M. van der Meulen and R.E. Kaim
January 1992