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AMOLF Institutional Repository

Selected Open Access and other scholarly publications from AMOLF and related researchers.

Tungsten deposition on GaAs using WF6 and atomic hydrogen Article

J. Appl. Phys., 1989-1992.

A.J.P. van Maaren and W.C. Sinke (Wim)

January 1993
Nucleation and deposition of W on GaAs by excimer laser-assisted chemical vapor deposition Article

J. Appl. Phys., 1981-1988.

A.J.P. van Maaren, W.C. Sinke (Wim) and J. Flicstein

January 1993
Ion irradiation damage in Er-doped silica probed by the Er3+ luminescence lifetime at 1.535 mm Article

J. Appl. Phys., 1669-1674.

A. Polman (Albert) and J.M. Poate

January 1993
Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As In Proceedings

E. Alves, M.F. da Silva, A.A. Melo, J.C. Soares, G.N. van den Hoven, A. Polman (Albert), K.R. Evans and C.R. Jones

January 1993
Experimental test of kinetic theories for heterogeneous freezing in silicon Article

Phys. Rev. B, 5-13.

P.A. Stolk, A. Polman (Albert) and W.C. Sinke (Wim)

January 1993
Simultaneous electron capture and target ion excitation in collisions of C4+ and N5+ on He Article

Z. Phys. D, 209-215.

R. Hoekstra (Ronnie), J.P.M. Beijers, F.J. de Heer and R. Morgenstern

January 1993
Formation of epitaxial b-FeSi2 films on Si(001) as studied by medium-energy ion scattering Article

J. Appl. Phys., 1104-1109.

K. Konuma, J. Vrijmoeth, P.M. Zagwijn, J.W.M. Frenken, E. Vlieg (Elias) and J.F. van der Veen

January 1993
Incorporation of high concentrations of erbium in crystal silicon Article

Appl. Phys. Lett., 507-509.

A. Polman (Albert), J.S. Custer, E. Snoeks and G.N. van den Hoven

January 1993

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