AMOLF Institutional Repository
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January 1993
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Electrically active, ion implanted boron at the solubility limit in silicon Article
Appl. Phys. Lett., 1134-36.J.R. Liefting, R. Schreutelkamp, J. Vanhellemont, W. Vandervorst, K. Maex, J.S. Custer and F.W. Saris
January 1993 -
Observation of an expanded top layer in a lamellar diblock copolymer film Article
Macromolecules, 4973-4974.January 1993 -
Structure of Ge(111)Ö3xÖ3R 30°-Au determined by surface x-ray diffraction Article
Phys. Rev. B, 1632-1642.P.B. Howes, C. Norris, M.S. Finney, E. Vlieg (Elias) and R. van Silfhout
January 1993 -
Time-resolved dynamics of electronic wave packets above the classical field-ionization threshold Article
Phys. Rev. Lett., 344-347.B. Broers, J.F. Christian, J.H. Hoogenraad, W.J. van der Zande, H.B. van Linden van den Heuvell and L.D. Noordam
January 1993 -
Bulk reorientation driven by orientational transition in liquid crystal monolayer Article
Phys. Rev. Lett., 758-761.January 1993 -
Erbium ion implantation doping of opto-electronic materials operating at 1,5 In Proceedings
A. Polman (Albert), E. Snoeks, G.N. van den Hoven, J.S. Custer, B.L.M. Hendriksen, M.B.J. Diemeer, J.W.M. van Uffelen, Y.S. Oei, M.K. Smit, M. Fleuster, et al. C. Buchal
January 1993 -
Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon In Proceedings
S. Lombardo (Salvatore), S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman (Albert)
January 1993