AMOLF Institutional Repository
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X-ray scattering studies of semiconductor interfaces: atomic structure and morphology Article
Appl. Surf. Sci., 62-69.January 1989 -
Chemical bonding at metal-semiconductor interfaces Article
Appl. Surf. Sci., 236-240.January 1989 -
Fysica: Norman Ramsey, Hans G. Dehmelt en Wolfgang Paul Article
Intermediair, 39-41.January 1989 -
Excimer laser induced deposition of tungsten on silicon Article
Appl. Surf. Sci., 386-396.A.J.P. van Maaren, R.L. Krans, E. de Haas and W.C. Sinke (Wim)
January 1989 -
Dependence of the NO/Ag(111) trapping probability on molecular orientation Article
Chem. Phys., 451-460.January 1989 -
Reduction of secondary defect formation in MeV B+ ion-implanted Si (100) Article
Appl. Phys. Lett., 1838-1840.W.X. Lu, Y.H. Qian, R.H. Tian, Z.L. Wang, R. Schreutelkamp, J.R. Liefting and F.W. Saris
January 1989 -
Nickel and cobalt silicides on silicon: thin-film reaction and interface structure Article
Appl. Surf. Sci., 13-26.January 1989 -
The interaction of nickel with a carbon surface at 20-280 °C Article
J. Phys.: Condens. Matter, 261-262.H. den Daas, H. Zeijlemaker (Hans), J. Verhoeven (Jan), E.J. Puik and M.J. van der Wiel
January 1989