AMOLF Institutional Repository
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High concentrations of erbium in crystal silicon by thermal or ion-beam-induced epitaxy of erbium-implanted amorphous silicon Book Chapter
J.S. Custer, A. Polman (Albert), E. Snoeks and G.N. van den Hoven
January 1993 -
Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon Article
Appl. Phys. Lett., 1942-1944.S. Lombardo (Salvatore), S.U. Campisano, G.N. van den Hoven, A. Cacciato and A. Polman (Albert)
January 1993 -
Tungsten deposition on GaAs using WF6 and atomic hydrogen Article
J. Appl. Phys., 1989-1992.January 1993 -
On the morphology of a lamellar triblock copolymer film Article
J. Phys. II, 139-146.W.H. de Jeu, P. Lambooy, I.W. Hamley, D. Vaknin, J. Skov Pedersen, K. Kjaer, R. Seyger, P. van Hutten and G. Hadziioannou
January 1993 -
Nucleation and deposition of W on GaAs by excimer laser-assisted chemical vapor deposition Article
J. Appl. Phys., 1981-1988.January 1993 -
Anchoring of nematic liquid crystals on mica in the presence of volatile molecules Article
Phys. Rev. E, 4556-4574.January 1993 -
On the observation time of Shi Shen's star catalogue Article
Proc. Kon. Ned. Akad. Wetensch., 503-511.S. Xiaochun and T. Jing
January 1993 -
Electron capture from Li by B5+, N5+ and Be4+ ions Article
J. Phys. B, 2029-2040.R. Hoekstra (Ronnie), R.E. Olson, H.O. Folkerts, E. Wolfrum, J. Pascale, F.J. de Heer, R. Morgenstern and H. Winter
January 1993