Direct band gap III−V semiconductors, emitting efficiently in the amber −green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the “green gap”. Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Alx In1−xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the “pure green” 555 nm (2.23 eV). We investigate the band structure of wurtzite AlxIn1−xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

Additional Metadata
Publisher ACS
Funder NWO , ERC
Persistent URL dx.doi.org/10.1021/acs.nanolett.8b00621
Journal Nano Lett.
Citation
Gagliano, L, Kruijsse, M, Schefold, J.D.D, Belabbes, A, Verheijen, M.A, Meuret, S, … Bakkers, E.P.A.M. (2018). Efficient Green Emission from Wurtzite AlxIn1–xP Nanowires. Nano Lett., 18(6), 3543–3549. doi:10.1021/acs.nanolett.8b00621