Thin polycrystalline B-doped diamond films on Si, prepared by microwave plasma chemical vapour deposition, were diagnosed by means of secondary electron emission measurements. Investigations, including caesium deposition, were carried out on a hydrogen and an oxygen-terminated sample cut from the same wafer. Caesiation resulted in a mean secondary electron emission factor <d > at a primary electron energy Ep= 1800 eV equal to 76 and 63 on the H- and O-terminated sample, respectively. Due to electron stimulated desorption, the secondary emission decreased to <d>»45 on both samples under irradiation to a level of ~1 C/cm2. On the caesiated samples the reduction of d* with electron dose was not local, but occurred over the whole surface because of the diffusion of Cs to the irradiated spot.

Additional Metadata
Journal Diamond Relat. Mater.
Citation
Hopman, H. J, Verhoeven, J, & Bachmann, P. K. (2000). Electron stimulated desorption from oxygenated and hydrogenated synthetic diamond films. Diamond Relat. Mater., 9, 1238–1244.