The influence of the dopant and annealing of ion-implanted silicon with a ruby laser

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Publisher	Istituto di Struttura della Materia Universit
Editor	E. Rimini
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Hoonhout, D., Tamminga, Y., Garrett, W. R., & Saris, F. W. (1978). The influence of the dopant and annealing of ion-implanted silicon with a ruby laser. In E. Rimini (Ed.), Proceedings of "Laser Effects in Ion Implanted Semiconductors", Catania, August 31 - September 2, 1978 (pp. 168–179).

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