Channelling studies of electron-induced displacement in Si

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Publisher	IoP
Editor	H. Albany
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Wiggers, L. W., & Saris, F. W. (1979). Channelling studies of electron-induced displacement in Si. In H. Albany (Ed.), Defects and Radiation Effects in Semiconductors : Conference proceedings (pp. 237–240).

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