Additional Metadata
Editor J. Gyulai , T. Lohner , E. Pasztor
Citation
Wiggers, L. W, & Saris, F.W. (1979). Effect of the Fermi level position in silicon on ion-induced displacement of impurities. In J Gyulai, T Lohner, & E Pasztor (Eds.), International Conference on Ion Beam Modification of Materials 4-8 September 1978, Budapest : Proceedings ; Vol. 1 (pp. 583–597).