Effect of the Fermi level position in silicon on ion-induced displacement of impurities

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Editor	J. Gyulai , T. Lohner , E. Pasztor
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Wiggers, L. W, & Saris, F.W. (1979). Effect of the Fermi level position in silicon on ion-induced displacement of impurities. In J Gyulai, T Lohner, & E Pasztor (Eds.), International Conference on Ion Beam Modification of Materials 4-8 September 1978, Budapest : Proceedings ; Vol. 1 (pp. 583–597).

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