2007-01-01
Reduction of carrier mobility in semiconductors caused by charge-charge interactions
Publication
Publication
Phys. Rev. B
,
Volume 75
-
Issue Article number: 233202
p. 1-
4
We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide (TiO2) and silicon (Si) using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 1021 m-3 is attributed to electron-hole scattering. In contrast, in TiO2, charge-charge interactions are suppressed due to dielectric screening, highlighting the vastly different dielectric properties for these two materials.
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Persistent URL | dx.doi.org/10.1103/physrevb.75.233202 |
Journal | Phys. Rev. B |
Citation |
Hendry, E, Koeberg, M, Pijpers, J.J.H, & Bonn, M. (2007). Reduction of carrier mobility in semiconductors caused by charge-charge interactions. Phys. Rev. B, 75(Article number: 233202), 1–4. doi:10.1103/physrevb.75.233202
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