Reduction of carrier mobility in semiconductors caused by charge-charge interactions
We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide (TiO2) and silicon (Si) using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 1021 m-3 is attributed to electron-hole scattering. In contrast, in TiO2, charge-charge interactions are suppressed due to dielectric screening, highlighting the vastly different dielectric properties for these two materials.
|Journal||Phys. Rev. B|
Hendry, E, Koeberg, M, Pijpers, J.J.H, & Bonn, M. (2007). Reduction of carrier mobility in semiconductors caused by charge-charge interactions. Phys. Rev. B, 75(Article number: 233202), 1–4. doi:10.1103/physrevb.75.233202