Threshold energy density for pulsed laser annealing of silicon

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Publisher	North Holland
Editor	J. F. Gibbons , L. D. Hess , T. W. Sigmon
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Hoonhout, D, & Saris, F.W. (1981). Threshold energy density for pulsed laser annealing of silicon. In J. F Gibbons, L. D Hess, & T. W Sigmon (Eds.), Laser and Electron-Beam Solid Interactions and Materials Processing : Proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. (pp. 31–37). North Holland.

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