A channeling study of defect-Boron complexes in Si

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Publisher	North-Holland
Editor	J. Narayan , T.Y. Tan
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Swanson, M. L., Howe, L. M., Saris, F. W., & Quenneville, A. F. (1981). A channeling study of defect-Boron complexes in Si. In J. Narayan & T. Y. Tan (Eds.), Defects in Semiconductors : Proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. (pp. 71–78).

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