Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma

1983-01-01

J. Appl. Phys. , Volume 54 p. 3993- 3997

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Gourrier, S, Smit, L, Friedel, P, & Larsen, P. K. (1983). Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma. J. Appl. Phys., 54, 3993–3997.

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