1983
Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma
Publication
Publication
J. Appl. Phys. , Volume 54 p. 3993- 3997
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J. Appl. Phys. | |
Gourrier, S, Smit, L, Friedel, P, & Larsen, P. K. (1983). Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma. J. Appl. Phys., 54, 3993–3997.
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