The use of pulsed laser irradiation in silicon molecular beam epitaxy: a comparative low energy electron diffraction study

1983-01-01

J. Vac. Sci. Technol. B , Volume 1 p. 888- 898

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Journal	J. Vac. Sci. Technol. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	de Jong, T, Douma, W. A. S, Smit, L, & Saris, F.W. (1983). The use of pulsed laser irradiation in silicon molecular beam epitaxy: a comparative low energy electron diffraction study. J. Vac. Sci. Technol. B, 1, 888–898.

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