Argon-ion assisted etching of silicon by molecular chlorine

1984-01-01

J. Appl. Phys. , Volume 55 p. 3813- 3818

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Kolfschoten, A. W, Haring, R. A, Haring, R. A, & de Vries, A. E. (1984). Argon-ion assisted etching of silicon by molecular chlorine. J. Appl. Phys., 55, 3813–3818.

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