Epitaxial growth of Si on GaP(100) and Si(111), monitored by soft X-ray reflection

1985

Surf. Sci. , Volume 154 p. 601- 613

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Journal	Surf. Sci.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Bruijn, M.P, Muller, H.G, Verhoeven, J, & van der Wiel, M.J. (1985). Epitaxial growth of Si on GaP(100) and Si(111), monitored by soft X-ray reflection. Surf. Sci., 154, 601–613.

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