Silicon strained layers grown on GaP(001) by molecular beam epitaxy

1985

J. Appl. Phys. , Volume 58 p. 3097- 3103

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Marée, P. M. J., Olthof, R. I. J., Frenken, J. W. M., van der Veen, J. F., Bulle-Lieuwma, C. W. T., Viegers, M. P. A., & Zalm, P. C. (1985). Silicon strained layers grown on GaP(001) by molecular beam epitaxy. J. Appl. Phys., 58, 3097–3103.

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