Etching of silicon by SF6 induced by ion bombardment

1986-01-01

Nucl. Instrum. Methods Phys. Res. B , Volume 13 p. 556- 560

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Journal	Nucl. Instrum. Methods Phys. Res. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Oostra, D. J, Haring, R. A, de Vries, A. E, Sanders, F. H. M, & van Veen, G. N. A. (1986). Etching of silicon by SF6 induced by ion bombardment. Nucl. Instrum. Methods Phys. Res. B, 13, 556–560.

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