Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon

1986

Appl. Phys. Lett. , Volume 48 p. 1132- 1134

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Journal	Appl. Phys. Lett.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Miyao, M, Polman, A, Sinke, W.C, Saris, F.W, & van Kemp, R. (1986). Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon. Appl. Phys. Lett., 48, 1132–1134.

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