Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon

1986

Appl. Phys. Lett. , Volume 48 p. 1132- 1134

Additional Metadata
Journal	Appl. Phys. Lett.
Organisation	Photonic Materials
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Miyao, M, Polman, A, Sinke, W.C, Saris, F.W, & van Kemp, R. (1986). Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon. Appl. Phys. Lett., 48, 1132–1134.

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