Extension of the model for Ar+ ion induced etching of Si by SF6

1987-01-01

Nucl. Instrum. Methods Phys. Res. B , Volume 19/20 p. 1022- 1025

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Journal	Nucl. Instrum. Methods Phys. Res. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	van Veen, G. N. A, Sanders, F. H. M, Dieleman, J, Zalm, P. C, Oostra, D. J, & de Vries, A. E. (1987). Extension of the model for Ar+ ion induced etching of Si by SF6. Nucl. Instrum. Methods Phys. Res. B, 19/20, 1022–1025.

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