Extension of the model for Ar+ ion induced etching of Si by SF6

1987

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Journal	Nucl. Instrum. Methods Phys. Res. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	van Veen, G.N.A, Sanders, F.H.M, Dieleman, J, Zalm, P.C, Oostra, D.J, & de Vries, A.E. (1987). Extension of the model for Ar+ ion induced etching of Si by SF6. Nucl. Instrum. Methods Phys. Res., Sect B, 19/20, 1022–1025.

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