Mechanisms of sputtering of Si in a Cl2 environment by ions with energies down to 75 eV

1988

J. Appl. Phys. , Volume 64 p. 315- 322

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Oostra, D. J, Haring, R. A, van Ingen, R. P, & de Vries, A. E. (1988). Mechanisms of sputtering of Si in a Cl2 environment by ions with energies down to 75 eV. J. Appl. Phys., 64, 315–322.

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