Materials Research Society
L.E. Rehn , J. Greene , F.A. Smidt

Schreutelkamp, R., Janssen, K. T. F., Saris, F. W., Westendorp, J. F. M., & Kaim, R. E. (1989). Influence of phosphorus dopant concentration on recrystallization of buried amorphous layers in Si(100) produced by channeled implants. In L. E. Rehn, J. Greene, & F. A. Smidt (Eds.), Processing and Characterization of Materials Using Ion Beams : Symposium held November 28-December 2, 1988, Boston Massachusetts, U.S.A. (pp. 557–562).