Influence of phosphorus dopant concentration on recrystallization of buried amorphous layers in Si(100) produced by channeled implants

1989

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Publisher	Materials Research Society
Editor	L.E. Rehn , J. Greene , F.A. Smidt
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Schreutelkamp, R., Janssen, K. T. F., Saris, F. W., Westendorp, J. F. M., & Kaim, R. E. (1989). Influence of phosphorus dopant concentration on recrystallization of buried amorphous layers in Si(100) produced by channeled implants. In L. E. Rehn, J. Greene, & F. A. Smidt (Eds.), Processing and Characterization of Materials Using Ion Beams : Symposium held November 28-December 2, 1988, Boston Massachusetts, U.S.A. (pp. 557–562).

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