Additional Metadata
Publisher Materials Research Society
Editor L. E. Rehn , J. Greene , F. A. Smidt
Citation
Schreutelkamp, R, Janssen, K. T. F, Saris, F.W, Westendorp, J. F. M, & Kaim, R. E. (1989). Influence of phosphorus dopant concentration on recrystallization of buried amorphous layers in Si(100) produced by channeled implants. In L. E Rehn, J Greene, & F. A Smidt (Eds.), Processing and Characterization of Materials Using Ion Beams : Symposium held November 28-December 2, 1988, Boston Massachusetts, U.S.A. (pp. 557–562). Materials Research Society.