Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering

1989-01-01

J. Appl. Phys. , Volume 66 p. 666- 673

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Slijkerman, W. F. J, Fischer, A. E. M. J, van der Veen, J. F, Ohdomari, I, Yoshida, S, & Misawa, S. (1989). Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering. J. Appl. Phys., 66, 666–673.

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