1989
The initial stages of growth of Ge on Si(001) studied by x-ray diffraction
Publication
Publication
J. Phys.: Condens. Matter , Volume 1 p. 273- 274
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J. Phys.: Condens. Matter | |
Williams, A. A, MacDonald, J. E, van Silfhout, R, van der Veen, J. F, Johnson, A. D, & Norris, C. (1989). The initial stages of growth of Ge on Si(001) studied by x-ray diffraction. J. Phys.: Condens. Matter, 1, 273–274.
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