The initial stages of growth of Ge on Si(001) studied by x-ray diffraction

1989-01-01

J. Phys.: Condens. Matter , Volume 1 p. 273- 274

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Journal	J. Phys.: Condens. Matter
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Williams, A. A, MacDonald, J. E, van Silfhout, R, van der Veen, J. F, Johnson, A. D, & Norris, C. (1989). The initial stages of growth of Ge on Si(001) studied by x-ray diffraction. J. Phys.: Condens. Matter, 1, 273–274.

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