Reduction of secondary defect formation in MeV B+ ion-implanted Si (100)

1989-01-01

Appl. Phys. Lett. , Volume 55 p. 1838- 1840

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Journal	Appl. Phys. Lett.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Lu, W. X, Qian, Y. H, Tian, R. H, Wang, Z. L, Schreutelkamp, R, Liefting, J. R, & Saris, F.W. (1989). Reduction of secondary defect formation in MeV B+ ion-implanted Si (100). Appl. Phys. Lett., 55, 1838–1840.

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