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Journal Appl. Phys. Lett.
Citation
Roorda, S, Poate, J.M, Jacobson, D.C, Dennis, B.S, Dierker, S, & Sinke, W.C. (1990). Raman study of de-relaxation and defects in amorphous silicon induced by MeV ion beams. Appl. Phys. Lett., 56, 2097–2099.