Strain relaxation in Ge/Si(001) studied using X-ray diffraction

1990

Additional Metadata
Publisher	Plenum Press
Editor	M.G. Lagally
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	MacDonald, J. E., Williams, A. A., van Silfhout, R., van der Veen, J. F., Finney, M. S., Johnson, A. D., & Norris, C. (1990). Strain relaxation in Ge/Si(001) studied using X-ray diffraction. In M. G. Lagally (Ed.), Kinetics of Ordering and Growth at Surfaces (pp. 473–481).

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