Strain relaxation in Ge/Si(001) studied using X-ray diffraction
|Editor||M. G. Lagally|
MacDonald, J. E, Williams, A. A, van Silfhout, R, van der Veen, J. F, Finney, M. S, Johnson, A. D, & Norris, C. (1990). Strain relaxation in Ge/Si(001) studied using X-ray diffraction. In M. G Lagally (Ed.), Kinetics of Ordering and Growth at Surfaces (pp. 473–481). Plenum Press.