Reduction of secondary defect formation in MeV As ion implanted Si(100)

1991-01-01

Nucl. Instrum. Methods Phys. Res. B , Volume 59/60 p. 614- 618

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Journal	Nucl. Instrum. Methods Phys. Res. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Schreutelkamp, R, Lu, W. X, Liefting, J. R, Raineri, V, Custer, J. S, & Saris, F.W. (1991). Reduction of secondary defect formation in MeV As ion implanted Si(100). Nucl. Instrum. Methods Phys. Res. B, 59/60, 614–618.

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