The role of extended defects on transient boron diffusion in ion-implanted silicon

1992

Mater. Sci. Eng. B , Volume 12 p. 307- 325

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Journal	Mater. Sci. Eng. B
Citation APA-ALL APA Style APA-ALL Style AAA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Schreutelkamp, R., Custer, J. S., Raineri, V., Lu, W. X., Liefting, J. R., Saris, F. W., Janssen, K. T. F., van der Meulen, P. F. H. M.& Kaim, R. E. (1992). The role of extended defects on transient boron diffusion in ion-implanted silicon. Mater. Sci. Eng. B, 12, 307–325.

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