The role of extended defects on transient boron diffusion in ion-implanted silicon

1992

Mater. Sci. Eng. B , Volume 12 p. 307- 325

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Journal	Mater. Sci. Eng. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Schreutelkamp, R., Custer, J. S., Raineri, V., Lu, W. X., Liefting, J. R., Saris, F. W., … Kaim, R. E. (1992). The role of extended defects on transient boron diffusion in ion-implanted silicon. Mater. Sci. Eng. B, 12, 307–325.

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