Avoiding dislocations in ion-implanted silicon

1992-01-01

Microelectron. Eng. , Volume 19 p. 357- 362

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Journal	Microelectron. Eng.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Saris, F.W, Custer, J. S, Schreutelkamp, R, Liefting, R. J, Wijburg, R. C. M, & Wallinga, H. (1992). Avoiding dislocations in ion-implanted silicon. Microelectron. Eng., 19, 357–362.

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