Dislocation formation in Si implanted at elevated temperature

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Publisher	Kluwer Academic Publishers
Editor	S. Coffa , F. Priolo (Francesco) , E. Rimini , J.M. Poate
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Liefting, J. R., Custer, J. S., Schreutelkamp, R., & Saris, F. W. (1992). Dislocation formation in Si implanted at elevated temperature. In S. Coffa, F. Priolo, E. Rimini, & J. M. Poate (Eds.), Crucial Issues in Semiconductor Materials and Processing Technologies : Proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1-13 July 1991 (pp. 219–224).

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