Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ~5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.

Additional Metadata
Persistent URL dx.doi.org/10.1063/1.2337278
Journal Appl. Phys. Lett.
Citation
Suomalainen, S, Guina, M, Hakulinen, T, Okhotnikov, O. G, Euser, T. G, & Marcinkevicius, S. (2006). 1µm saturable absorber with recovery time reduced by lattice mismatch. Appl. Phys. Lett., 89(Article number: 71112), 1–3. doi:10.1063/1.2337278