Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

1992

J. Appl. Phys. , Volume 71 p. 3780- 3784

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Wang, Z. L., Zhang, B.-X., Zhao, Q.-. t ., Li, Q., Liefting, J. R., Schreutelkamp, R., & Saris, F. W. (1992). Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering. J. Appl. Phys., 71, 3780–3784.

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