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Journal J. Appl. Phys.
Citation
Wang, Z. L, Zhang, B. -X, Zhao, Q.-t, Li, Q, Liefting, J. R, Schreutelkamp, R, & Saris, F.W. (1992). Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering. J. Appl. Phys., 71, 3780–3784.