To improve the thermal stability of Mo/Si multilayers, a novel method to form carbide based diffusion barriers, produced by the implantation of Si with CHx+ ions, has been developed. The multilayers were grown by e-beam evaporation, while CHx+ ions were implanted at the Mo/Si interfaces, using a Kaufman ion source with a Ne / CH4 gas mixture. Energies were varied from 300 to 1000 eV. The growth as well as the implantation procedure were monitored by in situ X-ray reflectometry. Auger Electron Spectroscopy was used to characterize the surface composition before and after CHx+ ion implantation. The shift of the Si LVV Auger peak revealed the formation of SiC. Ex situ X-ray reflectometry showed a thermal stability of both the reflectivity and the multilayer period up to 430 K.

Additional Metadata
Persistent URL dx.doi.org/10.1016/j.tsf.2005.09.202
Journal Thin Solid Films
Citation
Alink, L. G. A. M, van de Kruijs, R. W. E, Louis, E, Bijkerk, F, & Verhoeven, J. (2006). Improved temperature stability of Mo/Si multilayers by carbide based diffusion barriers through implantation of low energy CHx+ ions. Thin Solid Films, 510, 26–31. doi:10.1016/j.tsf.2005.09.202