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Journal Appl. Phys. Lett.
Citation
Liefting, J. R, Schreutelkamp, R, Vanhellemont, J, Vandervorst, W, Maex, K, Custer, J. S, & Saris, F.W. (1993). Electrically active, ion implanted boron at the solubility limit in silicon. Appl. Phys. Lett., 63, 1134–1136.