Very low surface recombination velocities on 2.5 Wcm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride
In this paper we present the first measurements of very low surface recombination velocities (< 90 cm/s) on 2.5 Wcm p-type silicon wafers, passivated with low-temperature PECVD (Plasma Enhanced Chemical Vapour Deposition) of Si-oxide and Si-nitride. Also n-type emitter surfaces were passivated by PECVD. A forming gas anneal turned out to be crucial in achieving low recombination velocities. No increase of the surface recombination velocity was observed after exposure of the layers to white light at 30
Leguijt, C, Eikelboom, J.A, Amesz, P.H, Steeman, R.A, Sinke, W.C, Sarro, P.M, … Rohatgi, A. (1993). Very low surface recombination velocities on 2.5 Wcm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride. In Technical Digest : 7th International Photovoltaic Science and Engineering Conference, Nov. 22-26/1993, Nagoya, Japan, Nagoya Congress Center (pp. 551–552). [s.n.].