Erbium implantation in silicon: A way towards Si-based optoelectronics
In this paper our recent work on erbium implantation for optical doping of silicon is reviewed. It is shown that O co-implantation plays a key role both in providing Er with the appropriate chemical surrounding and in allowing the incorporation of high Er concentrations in thick Si layers without the formation of twins and/or precipitates. The luminescence intensity in Er and O co-implanted samples shows a much weaker temperature dependence (a decrease by a factor of 30 from 77K to 300K) than in samples without O (a decrease by 3 orders of magnitude in the same temperature range). This allowed us to observe room temperature photo- and electro-luminescence in Er and O co-doped samples. The temperature dependence of the luminescence in these samples has been determined to be due to non-radiative de-excitation processes. These data are reported and discussed.
|Publisher||Materials Research Society|
|Editor||R.J. Culbertson , O.W. Holland , K.S. Jones , K. Maex|
Priolo, F, Franzò, G, Coffa, S, Polman, A, Bellani, V, Carnera, A, & Spinella, C. (1994). Erbium implantation in silicon: A way towards Si-based optoelectronics. In R.J Culbertson, O.W Holland, K.S Jones, & K Maex (Eds.), Materials Synthesis and Processing Using Ion Beams : Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. (pp. 397–408). Materials Research Society.