Surface X-ray diffraction has been used to monitor the growth of indium on silicon (111) as a function of temperature and to determine the atomic structure of the Si(111) 4 x 1-In reconstruction. The results indicate there are four indium atoms per 4 x 1 unit mesh with an average near neighbour separation which is reduced from that of the indium bulk.

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Journal Physica B
Citation
Finney, M. S, Norris, C, Howes, P. B, James, M. A, MacDonald, J. E, Johnson, A. D, & Vlieg, E. (1994). The growth and atomic structure of the Si(111)-indium interface studied by surface X-ray diffraction. Physica B, 198, 246–248.