In this paper we present the first measurements of very low surface recombination velocities (< 90 cm/s) on 2.5  cm p-type silicon wafers, passivated with low-temperature PECVD (Plasma Enhanced Chemical Vapour Deposition) of Si-oxide and Si-nitride. Also n-type emitter surfaces were passivated by PECVD. A forming gas anneal turned out to be crucial in achieving low recombination velocitics. No increase of the surface recombination velocity was observed after exposure of the layers to white light at 30°C and 1000 W/m2 for 500 h.

Sol. Energy Mater. Sol. Cells

Leguijt, C., Eikelboom, J. A., Amesz, P. H., Steeman, R. A., Sinke, W., Sarro, P. M., … Rohatgi, A. (1994). Very low surface recombination velocities on 2.5 W cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride. Sol. Energy Mater. Sol. Cells, 34, 177–181.