The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560-830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity shows a transient behavior that is attributed to the change in the relaxation state of the amorphous matrix. From 560 to 830 K the diffusivity during relaxation is enhanced by seven to two orders of magnitude compared to the value for bulk a-Si. Possible models that show the observed transient diffusion behavior are discussed.

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Journal J. Appl. Phys.
Citation
Zagwijn, P.M, Huisman, W.J, Polman, A, Vlieg, E, Reader, A.H, & Gravesteijn, D.J. (1994). Transient diffusion of Ga in amorphous silicon. J. Appl. Phys., 76, 5719–5723.