In this work we report the fabrication and characteristics of light emitting erbium-doped Si diodes operating at room temperature (RT). These devices were prepared by multiple high energy Er implantation in the active region of a p+-n+ Si diode. Oxygen or fluorine implantation in the Er-doped region was also performed in order to properly modify the Er3+ chemical surrounding. Electroluminescence (EL) at 1.54 µm and at RT has been observed under both forward and reverse bias conditions with the maximum intensity under reverse bias. The temperature dependence of the luminescence revealed that forward-bias EL decreases by about a factor of 30 on going from 100 K to 300 K. An identical temperature dependence is observed in photoluminescence (PL) suggesting that similar excitation mechanisms are responsible for PL and forward-bias EL. In contrast, reverse-bias EL presents a very weak temperature dependence, with a decrease by only a factor of 4 from 100 K to 300 K. These data are reported and possible excitation mechanisms are discussed.

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Journal Nucl. Instrum. Methods Phys. Res. B
Franzò, G, Priolo, F, Coffa, S, Polman, A, & Carnera, A. (1995). Room temperature light emitting silicon diodes fabricated by erbium ion implantation. Nucl. Instrum. Methods Phys. Res. B, 96, 374–377.